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| AOU448 N-Channel Enhancement Mode Field Effect Transistor General Description The AOU448 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications. Standard Product AOU448 is Pb-free (meets ROHS & Sony 259 specifications). AOU448L is a Green Product ordering option. AOU448 and AOU448L are electrically identical. TO-251 D Top View Drain Connected to Tab G S Features VDS (V) = 30V ID = 75A RDS(ON) < 5.6m (VGS = 10V) RDS(ON) < 9m (VGS = 4.5V) G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Avalanche Current C C C Maximum 30 20 75 56 200 30 45 50 25 -55 to 175 Units V V A A mJ W C TC=25C TC=100C ID IDM IAR EAR PD TJ, TSTG TC=25C Repetitive avalanche energy L=0.1mH Power Dissipation B TC=100C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Case B Symbol Steady-State Steady-State RJC Typ 44 2 Max 55 3 Units C/W C/W Alpha & Omega Semiconductor, Ltd. AOU448 Electrical Characteristics (T J=25C unless otherwise noted) Symbol Parameter Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=20V VDS=VGS, ID=250A VGS=10V, VDS=5V VGS=10V, ID=20A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forward Transconductance VDS=5V, ID=20A Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current 2342 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 462 320 1.1 70 VGS=10V, VDS=15V, ID=20A 34.8 13.1 18.5 9 VGS=10V, VDS=15V, RL=0.75, RGEN=3 IF=20A, dI/dt=100A/s 11 30.7 9.2 34.5 28.3 42 34 1.5 84 42 TJ=125C 1 100 4.7 7 7.3 40 1 55 2810 5.6 8.5 9 1.5 Min 30 1 5 100 2.5 Typ Max Units V A nA V A m m S V A pF pF pF nC nC nC nC ns ns ns ns ns nC STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Qgd tD(on) tr tD(off) tf trr Qrr Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/s A: The value of R JA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25C. The Power dissipation PDSM is based on R JA and the maximum allowed junction temperature of 150C. The value in any given application depends on the user's specific board design, and the maximum temperature fo 175C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175C. D. The R JA is the sum of the thermal impedence from junction to case R JC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 s pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25C. The SOA curve provides a single pulse rating. I. Revision 0: June 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOU448 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 90 80 70 60 ID (A) 50 40 30 20 10 0 0 1 2 3 4 5 VDS (Volts) Fig 1: On-Region Characteristics 12 10 RDS(ON) (m) 8 6 VGS=10V 4 2 0 30 40 50 60 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 10 20 0.8 0 25 50 75 100 125 150 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature VGS=4.5V Normalized On-Resistance 1.8 VGS=10V ID=20A VGS=3V 0 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics 3.5V 20 10 25C 5.5 10V 40 4V ID(A) 30 125C 5V 4.5V 50 60 VDS=5V 6.6 9.5 1.6 1.4 1.2 VGS=4.5V ID=20A 1 20 ID=20A 16 1.0E+02 1.0E+01 1.0E+00 125C RDS(ON) (m) 125C 8 25C IS (A) 12 1.0E-01 25C 1.0E-02 1.0E-03 4 1.0E-04 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 0 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. AOU448 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 VDS=15V ID=20A Capacitance (pF) 4000 3600 3200 2800 2400 2000 1600 1200 800 400 0 0 10 30 40 50 60 Qg (nC) Figure 7: Gate-Charge Characteristics 20 70 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Crss Coss Coss Crss Ciss 8 VGS (Volts) 6 4 2 1000.0 TJ(Max)=175C, TA=25C 100.0 ID (Amps) RDS(ON) limited 10s Power (W) 200 160 120 80 40 TJ(Max)=175C TA=25C 10.0 DC 1.0 100s 1ms 10ms 0.1 0.1 1 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 ZJC Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TC+PDM.ZJC.RJC RJC=3C/W 1 10 100 0 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Alpha & Omega Semiconductor, Ltd. AOU448 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 ID(A), Peak Avalanche Current 80 60 40 20 0 0.00001 60 Power Dissipation (W) tA = L ID BV - VDD 50 40 30 20 10 0 TA=25C 0.0001 0.001 0 25 50 75 100 125 150 175 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability TCASE (C) Figure 13: Power De-rating (Note B) 100 Current rating ID(A) 75 50 25 0 0 25 50 75 100 125 150 175 TCASE (C) Figure 14: Current De-rating (Note B) Alpha & Omega Semiconductor, Ltd. |
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